OPC Requirement and Development Status of EUV Lithography for Sub-7nm Technologies
As EUV lithography will be one of major process options from 7nm technology node, OPC techniques are also required to be ready for mass production as well as other EUV infrastructures such as source power, resist materials and mask defect management. In this presentation, new requirements for EUV OPC compared with ArF and current readiness will be demonstrated. New challenges such as high flare sensitivity and mask shadow effect by using reflective optics in EUVL have been studied enough to make up with accurate OPC model, however practical OPC application flow should be developed considering long runtime for full-field correction. Also, simulation method and verification index will be discussed to predict LER/LWR values or random defect possibilities induced by EUV specific stochastic effect. Finally, RET strategy such as EUV SRAF, SMO and high NA OPC will be investigated for further technology node under 5nm.