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S1. Advanced Lithography

Room 307, COEX Wednesday, January 23
1:00pm to 4:40pm

Beginning of EUV High Volume Manufacturing
 
Advanced lithography session of the STS 2019 is prepared under the theme of "Beginning of EUV High Volume Manufacturing". This session will provide the opportunities of sharing the information on the latest progresses of EUV lithography as well as other advanced technologies. Recently, there has been a lot of significant progresses made on various fronts of EUV lithography technologies and it is about to enter the high volume manufacturing stage. During the session, you can hear the very up-to-date knowledge and information on various segments, such as exposure tools, optics, materials, mask, and processes including etching aspects, of EUV and also some of optical lithography technology from the prominent figures of the academia and industry. The extendibility issues of EUV such as high NA EUV and industrial challenges where we have to further collaborate will be touched and discussed throughout the session.
 
  • Date: Jan 23(Wed), 2019
  • Time: 13:00-16:40
  • Room: #307, Conference Room (South), COEX
  • Language: English (Simultaneous interpretation will NOT be provided)​​

 

Committee

  • Shangwon Kim (DB HiTek)
  • Seong-Sue Kim (Samsung Electronics)
  • Jaehyun Kim (Dongjin Semichem)
  • Hong Seok Kim (Toppan Photomasks Korea)
  • Chang-Nam Ahn (ASML Korea)
  • Hye-Keun Oh (Hanyang University)
  • Changmoon Lim (SK hynix)
  • Jaesung Choi (ASML Korea)

 

Registration Fee 

  SEMI Member Non-Member Student
Early Bird (by Jan 16) 150,000 won 180,000 won 80,000 won
Onsite 180,000 won 200,000 won 100,000 won
 

 

Agenda

   
 13:00-13:40
 
 
 
 13:40-14:00
 
 
 
 14:00-14:20
 
 
 
 14:20-14:40
 
 
 
 14:40-15:00
Break
 
 
 15:00-15:20
Atomic Layer Etch for Mitigation of EUV Resist Stochastic Defects
 
 
 
 15:20-16:00
 
 
 
 16:00-16:20
 
 
 
 16:20-16:40
EUV Materials Challenge for DRAM Application
 
JunKyoung Lee, SK hynix
 
 

*The agenda will be subject to change without notice.

 

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