02-531-7800

English


S2. Advanced Materials & Process Technology

Room 308, COEX Wednesday, January 23
1:00pm to 6:00pm

Advanced Materials & Technologies for Emerging Devices
 
In this session, the most up-to-date research and development outputs in the field of Advanced Materials and Process Technology, which are the key enablers of the future semiconductor devices, will be shared. Many prominent authors from the academia and industries will talk various research areas of functional materials and semiconductor devices not only in the view points of the fundamental but also of the mass production. Especially, topics regarding material innovation for semiconductor fabrication will be highlighted and technical challenges for mass production will be discussed. Excellent 8 presentations including 4 outstanding invited talks will be given to cover the major technical issues and the leading-edge solutions.
 
  • Date: Jan 23(Wed), 2019
  • Time: 13:00-18:00
  • Room: #308, Conference Room (South), COEX
  • Language: English (Simultaneous interpretation will NOT be provided)​​

 

Committee

  • Deok-Sin Kil (SK hynix)
  • Si-Bum Kim (MagnaChip Semiconductor)
  • Hyoung-Yoon Kim (DB HiTek)
  • Jae-Sung Roh (Jusung Engineering)
  • Ki-Seon Park (SK Materials)
  • Jin-Seong Park (Hanyang University)
  • Hyun-Chul Sohn (Yonsei University)
  • Gill Lee (Applied Materials)
  • Marco Lee (Lam Research Korea)
  • Won-Jun Lee (Sejong University)
  • In-Gon Lim (Digital Imaging Technology)
  • Han-Jin Lim (Samsung Electronics)
  • Ji-Hyun Choi (Tokyo Electron Korea)

 

Registration Fee

  SEMI Member Non-Member Student
Early Bird (by Jan 16) 150,000 won 180,000 won 80,000 won
Onsite 180,000 won 200,000 won 100,000 won

 

    Agenda

     
     
    13:00-13:40
    New Precursors for Vapor Deposition Processes
     
     
     
    13:40-14:00
     
     
     
    14:00-14:30
    CVD/ALD Developments for Safety, Performance & Affordability
     
    Jean-Marc Girard, Air Liquide Advanced Materials (invited)
     
     
    14:30-14:50 Break
     
     
    14:50-15:30 Formation of Interface Dipole Layers between Two Dielectrics: Considerations on Physical Origins and Opportunities to Manipulate Its Strength
      Prof. Koji Kita, The University of Tokyo (invited)
     
     
    15:30-15:50 Graphene and 2D Layered Materials; Device Application Prospect
     
    Hyeon-Jin Shin, SAIT, Samsung Electronics 
     
     
    15:50-16:30 Initial Characteristics of ALD Process
     
    Prof. Jiyoung Kim, University of Texas at Dallas (invited)
     
     
    16:30-16:50 Break
     
     
    16:50-17:20 Ferroelectricity in Fluorite Structure Oxides for Future Memory Devices
      Prof. Min Hyuk Park, Pusan National University (invited)
       
    17:20-17:40 Materials and Processes for Crosspoint Emerging Memory
      WanGee Kim, Applied Materials
       
    17:40-18:00 Study of Interface Dipole in Effective Work Function Modulation
     
    Hyungchul Kim, SK hynix
     
     
    * The agenda will be subject to change without notice.
    Sponsored by: 
    Share page with AddThis