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Core Technology in the Production of Heavily-doped Silicon Wafer for Power Device

Core Technology in the Production of Heavily-doped Silicon Wafer for Power Device

Core Technology in the Production of Heavily-doped Silicon Wafer for Power Device

 

The need for low energy-consuming power device is increased along the growth in electric vehicle market. It is important to lower the on-resistance and current leakage in power MOSFET. Because the source and drain are located at front and backside through the substrate silicon, the resistance of wafer plays key role in MOSFET current. Currently, requirements for the low resistivity of silicon wafer are reached to sub mΩ-cm. However, due to the difference in covalent radii and the high volatility of elements such as As, P and Sb, the maximum solid solubilities of dopants are limited. In this study, we historically reviewed the dopant segregation model in CZ-Si and a new method is proposed for control the dopant by considering the experimental results of 200mm Si crystal growth.

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