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EUV Resist Process Development to Achieve CD Uniformity with High Sensitivity

EUV Resist Process Development to Achieve CD Uniformity with High Sensitivity

EUV Resist Process Development to Achieve CD Uniformity with High Sensitivity

 

EUV resist is one of the most critical component to access of EUV lithography to HVM. In order to get sufficient productivity to compare with current multiple patterning based on ArF immersion, many concepts of process have been suggested and evaluated. In this presentation, we will review our several evaluation results and discuss the requirement of additional process optimization.

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