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Metal Oxide Resists for EUVL: Improving Post-Etch Performance with Process Simplification

Metal Oxide Resists for EUVL: Improving Post-Etch Performance with Process Simplification

Metal Oxide Resists for EUVL: Improving Post-Etch Performance with Process Simplification

 

To meet the challenging patterning requirements for EUV lithography, Inpria has developed an entirely new class of photoresists based on metal oxide materials. One of the significant differences between conventional resists and metal oxide (MOx) based resists is the inherently high etch contrast of the latter relative to other layers in the stack. Having what amounts to a hard mask at the top of the lithography stack results in a variety of additional degrees of freedom for integration. This can encompass the straightforward reduction of layers in the patterning stack or enabling entirely new integration flows that leverage the etch properties of a MOx resist. In essence, MOx resists are EUV photo-patternable hardmasks. In this presentation, we discuss process integration opportunities unlocked by Inpria’s MOx resists, which provide enhanced image fidelity post-etch with simpler processes.

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