CMP & Cleaning for Emerging Technology
As IDMs are developing and manufacturing single digit nm devices with 3 dimentions, they need new technologies to overcome its limits and obstacles. It is a challeng not only for IDM but also for suppliers who have to deliver new materials and equipments. These difficulties occurred in CFM and CMP technologies as well. However, we can find the solution for this through collaborations and discussions actively between IDM, supplier and academia. This session will provide excellent 8 presentations from experts to share the breaktrough technologies for CFM and CMP.
-
날짜: 2019년 1월 24일(목)
-
시간: 13:00-16:40
-
장소: 코엑스 3층 308호
-
언어: 영어 (동시통역은 제공되지 않습니다.)
Committee
-
Kyunghyun Kim (Samsung Electronics)
-
Sang Yong Kim (Korea Polytechnics)
-
Taesung Kim (Sungkyunkwan University)
-
Ho Youn Kim (DB HiTek)
-
Jin-Goo Park (Hanyang University)
-
Sang Woo Lim (Yonsei University)
-
Haedo Jeong (Pusan National University)
-
Hong, Chang-Ki (Versum Materials)
-
Kyungho Hwang (SK hynix)
등록비
| SEMI 회원사 | 비회원사 | 학생 | |
| 사전등록(1/16까지) | 150,000 원 | 180,000 원 | 80,000 원 |
| 현장등록 | 180,000 원 | 200,000 원 | 100,000 원 |
아젠다
|
|
|
|
Session 1: CMP Technology
|
|
|
|
|
|
13:00-13:40
|
|
|
|
|
|
|
|
|
13:40-14:00
|
|
|
|
|
|
|
|
|
14:00-14:20
|
Cleaner Induced Defect Challenges of BEOL Cu CMP in Advanced Logic Device
|
|
|
|
|
|
|
|
14:20-14:40
|
|
|
|
|
|
|
|
|
14:40-15:00
|
Break
|
|
|
|
|
|
|
|
Session 2: CFM Technology
|
|
|
|
|
|
15:00-15:40
|
|
|
|
|
|
|
|
|
15:40-16:00
|
Influence of Surface Preparation on Gate Oxide Electrical Properties
|
|
|
|
|
|
|
|
16:00-16:20
|
|
|
|
|
|
|
|
|
16:20-16:40
|
|
|
|
David Hera, Syft Technologies |
|
|
|
*상기일정은 사전 안내 없이 변경될 수 있습니다.
*발표자료는 연사동의를 받은 자료에 한하여 행사 이후 이메일로 다운로드 방법을 안내드립니다.
|
Sponsored by
|
 |
Supported By
|
 |
