Language: English (Simultaneous interpretation will NOT be provided)
|사전등록(2/1까지)||150,000 원||180,000 원||80,000 원|
|현장등록||180,000 원||200,000 원||100,000 원|
Continuous shrinkage of device dimension to nm level requires new materials and device structure which demand a new paradigm in contamination control and planarization to improve the production yield and device reliability. CFM technology has become more important in device manufacturing below 20 nm devices. Film loss free and damage free cleaning technology face to serious challenges for next generation device cleaning. Also CMP has grown to be one of the indispensable technologies for advanced node device fabrications such as FinFET, III/V materials and V-NAND. 7-nm logic technology is already under developing now; and CMP will play the main roll on patterning for sub-7 nm technology. In order to achieve the advanced process successfully, it is essential to make the combination among consumable parts in CMP. The purpose of this session is to increase the level of understanding on current and future CFM/CMP technology. Therefore, we are trying to share our intensive and profound perspectives through some remarkable speeches here.
- Gu Sung Kim (Kangnam University)
- Young Bae Park (Andong National University)
- Minsuk Suh (SK hynix)
- WS Shin (ASE Korea)
- Seh Kwang Lee (Ehwa Diamond)
- Hanchoon Lee (Dongbu HiTek)
- Ji Young Chung (Amkor Technology)
- Soon Jin Cho (Samsung Electro-Mechanics)
- Taeje Cho (Samsung Electronics)
- CS Han (ASE Korea)
*상기 일정은 사전 안내 없이 변경될 수 있습니다.
* 발표 자료는 당일 컨퍼런스 종료 후 사이트를 통해 배포됩니다 (연사가 동의하지 않는 경우는 배포되지 않음).