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S3. Device Technology

 

Towards 10nm and Beyond 

  • 날짜: 2017년 2월 8일 수요일
  • 시간: 오후 1시 - 오후 5시 00분
  • 장소: 코엑스 3층 컨퍼런스룸(남) 317호
  • 언어: 영어 (동시통역은 제공되지 않음)

 

등록비  
  SEMI 회원사 비회원사 학생
사전등록(2/1까지) 150,000 원 180,000 원 80,000 원
현장등록 180,000 원 200,000 원 100,000 원

 

Scaling down issue is still going on in semiconductor technology and it aims to be under 10nm and even beyond. In this process development, a lot of obstacles are waiting for us and needs brand-new approach to find a solution. In this year, we will bring up the challenges toward 10nm and beyond and discuss it with expertise from all of the world. You will find the clue for more than Moore era and all the breakthrough device technology trend, as well.

 

후원

 

 

Committee
Oh-Kyong Kwon (Hanyang University)
Dong-Won Kim (Samsung Electronics)
Tae Kyun Kim (SK hynix)
Nae-In Lee (Samsung Electronics)
Sang Gi Lee (Dongbu HiTek)
Hi-Deok Lee (Chungnam National University)
Min Gyu Lim (MagnaChip Semiconductor)
Byung Jin Cho (KAIST)
Sung Woo Hwang (Samsung Advanced Institute of Technology)

 

아젠다

13:00-13:40 Story about Single Digit Nodes; Blessing or Curse, You Can Choose
  Youseok Suh, Qualcomm (invited)
   
13:40-14:10 Computational Material Screening: Towards Advanced Semiconductor Devices
  Jai Kwang Shin, Samsung Advanced Institute of Technology
   
14:10-14:50 Novel Transistors by Damage-free Doping Method and Microwave Annealing for Sub-7nm Node
  Yao-Jen Lee, National Nano Device Laboratories (invited)
   
14:50-15:10 Break
   
15:10-15:50 Many-Body Physics Based Devices for Beyond CMOS
  Prof. Leonard Franklin Register, University of Texas at Austin (invited)
   
15:50-16:20 Overcoming the Limitation of Cell Transistor Reliability in Ultimately Scaled DRAM Beyond 20-nm
  Seung Wan Ryu, SK hynix
   
16:20-17:00 Graphene-based Layer Transfer & Crystalline-based ReRAM  
  Prof. Jeehwan Kim, MIT (invited)

 

*상기 일정은 사전 안내 없이 변경될 수 있습니다.

*발표 자료는 당일 컨퍼런스 종료 후 사이트를 통해 배포됩니다 (연사가 동의하지 않는 경우는 배포되지 않음). 

 

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