Plasma Process for Next Generation Devices
- 날짜: 2017년 2월 9일 목요일
- 시간: 오후 1시 - 오후 6시 10분
- 장소: 코엑스 3층 컨퍼런스룸(남) 307호
- 언어: 영어 (동시통역은 제공되지 않음)
|사전등록(2/1까지)||150,000 원||180,000 원||80,000 원|
|현장등록||180,000 원||200,000 원||100,000 원|
The semiconductor devices have advanced rapidly and changed our world drastically. Do you know there has been the plasma technologies behind these advancements? The plasma technologies have largely contributed to make the sophisticated, complex and various semiconductor devices.
The plasma technologies have created the various process technologies like plasma-assisted etching, deposition and even cleaning and lithography. The plasma studies lead to the high-tech equipment, precious plasma control, software, and simulation in the manufacture environment and also make 3-D structure, fine feature sizes by multi-patterning processing, fine pattern by atomic layer processing, and high performance by metallic materials processing in the application environment.
Above all things, these days we are still focusing on existing devices to maximize the high performance and high productivity. Especially, we are also concentrating on the New Memory Devices featuring high speed, high endurance and low power consumption to gain the variety of applications and functions. To quench the desires, we invited professionals from the industries and academic.
It is believed that this symposium will provide valuable discussion among professionals and experts working in the exciting areas for a long time.
Jaesoung Kim (Dongbu HiTek)
Gyoungjin Min (Lam Research Korea)
Jongchul Park (Samsung Electronics)
Jong Won Shon (ASM Genitech)
Geun Young Yeom (Sungkyunkwan University)
Minsuk Lee (SK hynix)
IC Jang (Lam Research Korea)
*상기 일정은 사전 안내 없이 변경될 수 있습니다.
*발표 자료는 당일 컨퍼런스 종료 후 사이트를 통해 배포됩니다 (연사가 동의하지 않는 경우는 배포되지 않음).