Cheol Seong Hwang

Seoul National University

“Cheol Seong Hwang” received the M.Sc. degree in 1989 and the Ph.D. degree in 1993 in Department of inorganic materials science and engineering, both from Seoul National University-Seoul, South Korea. In 1993 he joined the Materials Science and Engineering Laboratory of National Institute of Standards and Technology, MD USA, as a postdoctoral research fellow. Then, he joined Samsung Electronics as a senior researcher from 1994, made contributions to the fields of semiconductor memory devices with researching on high-k dielectrics including (Ba,Sr)TiO3. Since 1998, he has been a professor in the department of materials science and engineering at Seoul National University. He has authored or coauthored more than 550 papers in international peer-reviewed scientific journals, which are cited ~22,500 times (H-index 71), has given 100 invited presentations at international conferences. He also holds ~ 128 international/domestic patents. He is a recipient of Alexander von Humboldt fellowship award, which made him stay in Forschungszentrum Juelich, Germany as a Humboldt fellow in 2004, the 7th presidential young scientist award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His current interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, negative capacitance effect, and thin film transistors. He is also working actively in the field of neuromorphic computing devices/materials. He served as the general chair of international ALD conference in June 2010, Seoul, Korea. He also authored a book entitled “Atomic Layer Deposition for semiconductor” through Springer in 2013. He is a regular member of Korean Academy of Science and Technology, and a Fellow of Royal Society of Chemistry, UK.

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