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Surface Reaction Mechanisms of Atomic Layer Etching and High-Aspect-Ratio Reactive Ion Etching

1:00 pm - 1:40 pm

While the miniaturization of semiconductor devices is now approaching the atomic-scale limit, the demand for higher performance of computer chips is ever growing. This trend has driven new device technologies such as three dimensional structures and new materials, which also demands further innovation in process technologies. As the device sizes are now close to the atomic scale, the required accuracy of processing is also at the atomic scale with little or no damage to the surface critical for device performance. In this sense, ion bombardment energy of typical plasma processes needs to be lowered as much as possible in general (except for some specific applications), which makes surface chemical reactions play more important roles. When new materials are used, new surface chemical reactions must be explored to achieve what is needed in the process. The author and his research group members have analyzed surface chemistries of various materials such as Si based materials, metal, and metal oxides, mostly for the purpose of reactive ion etching (RIE) and atomic layer etching (ALE), using beam experiments and molecular dynamics (MD)/first-principle quantum mechanical (QM) simulations. In this presentations, some of our latest results on etching mechanism analyses for RIE of SiN, ALE of SiO2, and thermal ALE of metal with hexafluoroacetylacetone (hfacH) will be presented.

Speaker

S Hamaguchi

Prof. Satoshi Hamaguchi

Professor, Osaka University

Satoshi Hamaguchi, Ph.D., has been Professor of Engineering at the Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Osaka, Japan, since 2004. He has been working on analyses of plasma surface interactions for semiconductor etching and deposition processes and surface modification of biomaterials and medical devices, using modeling, numerical simulations, and beam and plasma experiments. His interest also includes plasma medicine, and nuclear fusion, application of data science to plasma applications.  

Prior to joining Osaka University, Dr. Hamaguchi was Associate Professor of Energy Science, Graduate School of Energy Sciences, Kyoto University, Kyoto, Japan, from 1998 to 2004, Research Staff Member of T. J. Watson Research Center, IBM Research Division, IBM Co. at Yorktown Heights, New York, USA, from 1990 to 1998, and Research Fellow at the Institute of Fusion Studies, University of Texas, Austin, Texas, USA, from 1988 to 1990.

Dr. Hamaguchi received his M. Sci and Ph.D. degrees in mathematics from Courant Institute of Mathematical Sciences, Department of Mathematics, New York University, New York, USA, in 1986 and 1988, B. Sc. an M. Sci in physics from the Department of Physics, University of Tokyo, Tokyo, Japan, in 1982 and 1984. He also holds a Ph. D. in physics from the University of Tokyo. He is a Fellow of American Vacuum Society and American Physical Society.