Skip to main content

S2. Advanced Materials & Process Technology

Wednesday, February 5 | 1:00 pm - 5:00 pm
#308

Innovative Materials and Processes for the Semiconductor Technology

In this session, the most up-to-date research and development outputs in the field of Advanced Materials and Process Technology, which are the key enablers of the future semiconductor devices, will be shared. Many prominent authors from the academia and industries will talk various research areas of functional materials and semiconductor devices not only in the view points of the fundamental but also of the mass production. Especially, both revolutionary and evolutionary approach to overcome scaling limit will be discussed in the respect of precursor, equipment, and integration innovation. Excellent 8 presentations including 4 outstanding invited talks will be given to cover the major technical issues and the leading-edge solutions.

 

  • Date: Feb 5(Wed), 2020
  • Time: 1:00 pm - 5:00 pm
  • Room: #308, Conference Room (South), COEX
  • Language: English (Simultaneous interpretation will NOT be provided)​​

 

Committee

  • Si-Bum Kim (MagnaChip Semiconductor)
  • Oh Hyun Kim (SK hynix)
  • Hyoung-Yoon Kim (DB HiTek)
  • Jae-Sung Roh (Jusung Engineering)
  • Ki-Seon Park (SK Materials)
  • Nae Hak Park (Applied Materials)
  • Jin-Seong Park (Hanyang University)
  • Hyun-Chul Sohn (Yonsei University)
  • Marco Lee (Lam Research Korea)
  • Won-Jun Lee (Sejong University)
  • In-Gon Lim (Digital Imaging Technology)
  • Han-Jin Lim (Samsung Electronics)
  • Ji-Hyun Choi (Tokyo Electron Korea)

 

 

Registration Fee

  SEMI Member Non-Member Student
Early Bird (by Jan 29) 150,000 won 180,000 won 80,000 won
Onsite 180,000 won 200,000 won 100,000 won

 

Agenda

Extending Memory and Logic Roadmaps with New Materials and Processes

Ivo J. Raaijmakers

ASM International
1:00 pm - 1:30 pm

Advanced Process Technologies to Enable Future Devices and Scaling

Robert D. Clark

Tokyo Electron
1:30 pm - 2:00 pm

Atomic Layer Deposition of Mo and MoNx Films from Chloride-based Molybdenum Precursors

Se-won Lee

Versum Materials
2:00 pm - 2:20 pm

Challenges of High Aspect Ratio Gap Fill Process in the Front-end-of-line Processing

Hyung Chul Kim

SK hynix
2:20 pm - 2:40 pm

Break

2:40 pm - 3:00 pm

Metallization Challenges in 3D NAND

Raghuveer Makala

Western Digital
3:00 pm - 3:40 pm

Precursors for the Atomic Layer Deposition of Electropositive Metal Films

Charles H. Winter

Wayne State University
3:40 pm - 4:20 pm

Interconnect Scaling – Implications & Solutions for RC Delay

Kevin Moraes

Applied Materials
4:20 pm - 4:40 pm

Enabling Device Scaling through Thin Film Stress Control

Alice Hollister

Lam Research
4:40 pm - 5:00 pm

*The agenda will be subject to change without notice.

Sponsors