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S3. Device Technology

Wednesday, February 5 | 1:00 pm - 5:10 pm
#317

Innovative Approach to Next-generation Device Technology

The scaling-down of semiconductor device has been constantly driven by increased demand for high-performance and low-power. Recent development on semiconductor device is mainly on progress through either evolutionary or revolutionary path.

The evolutionary steers the transition from conventional devices into the state-of-the art devices, on the other hand, revolutionary attempts arise to create the applications such as IOT, AI, automotive, health care, and so on. This session will handle various devices and the applications for memory, logic, RF and emerging devices with the distinguished 7 speakers so that it offers the opportunity to deliberate over the future of device development.

 

  • Date: Feb 5(Wed), 2020
  • Time: 1:00 pm - 5:10 pm
  • Room: #317, Conference Room (South), COEX
  • Language: English (Simultaneous interpretation will NOT be provided)​​

 

Committee

  • Oh-Kyong Kwon (Hanyang University)
  • Dong-Won Kim (Samsung Electronics)
  • Tae Kyun Kim (SK hynix)
  • Rock-Hyun Baek (POSTECH)
  • Changhwan Shin (Sungkyunkwan University)
  • Sang Gi Lee (DB HiTek)
  • Hi-Deok Lee (Chungnam National University)
  • Byung Jin Cho (KAIST)
  • Woo Young Choi (Sogang University)
  • Sung Woo Hwang (Samsung Advanced Institute of Technology)

 

Registration Fee

  SEMI Member Non-Member Student
Early Bird (by Jan 29) 150,000 won 180,000 won 80,000 won
Onsite 180,000 won 200,000 won 100,000 won

 

Agenda

Memory-based Neuromorphic Hardware for Advanced Neural Network Models

Dmitri Strukov

UC Santa Barbara
1:00 pm - 1:40 pm

Innovative Approaches to Next-Generation Device Technology

Dechao Guo

IBM Research
1:40 pm - 2:20 pm

TBD

Taehoon Kim

SK hynix

2:20 pm - 2:50 pm

Break

2:50 pm - 3:10 pm

Memory Process, Design and Cell Architecture: Current & Future

Jeongdong Choe

TechInsights
3:10 pm - 3:30 pm

Emerging Ferroelectric Devices for Energy-Efficient Computing

Masaharu Kobayashi

The University of Tokyo
3:30 pm - 4:10 pm

Epitaxy of (In)AlGaN Layer Stacks for RF and Power Switching

Joff Derluyn

EpiGaN/Soitec
4:10 pm - 4:50 pm

TBD

4:50 pm - 5:10 pm

*The agenda will be subject to change without notice.

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