Enabling Vertically Integrated Memories with Co-optimized Deposition and Etch Solutions
The semiconductor industry needs new levers to scale across all device types. Vertical scaling is one of the approaches. 3D NAND Flash is the first embodiment of vertically integrated memories. Emerging storage class memories are following suit. To vertically scale memory devices, the biggest challenges are to deposit new materials with the required uniformity, to deposit thin conformal films with atomic level precision and to etch new structures and high aspect ratio holes and trenches with high CD uniformity. In this presentation, we will cover deposition and etch challenges and co-optimized solutions of vertically integrated memories.