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S3. Device Technology

Wednesday, February 5 | 1:00 pm - 5:00 pm

Innovative Approach to Next-generation Device Technology

The scaling-down of semiconductor device has been constantly driven by increased demand for high-performance and low-power. Recent development on semiconductor device is mainly on progress through either evolutionary or revolutionary path.

The evolutionary steers the transition from conventional devices into the state-of-the art devices, on the other hand, revolutionary attempts arise to create the applications such as IOT, AI, automotive, health care, and so on. This session will handle various devices and the applications for memory, logic, RF and emerging devices with the distinguished 7 speakers so that it offers the opportunity to deliberate over the future of device development.


  • Date: Feb 5(Wed), 2020
  • Time: 1:00 pm - 5:00 pm
  • Room: #317, 3F, COEX
  • Language: English (Simultaneous interpretation will NOT be provided)​​



  • Oh-Kyong Kwon (Hanyang University)
  • Dong-Won Kim (Samsung Electronics)
  • Tae Kyun Kim (SK hynix)
  • Rock-Hyun Baek (POSTECH)
  • Youngwoo Park (Tokyo Electron)
  • Changhwan Shin (Sungkyunkwan University)
  • Sang Gi Lee (DB HiTek)
  • Hi-Deok Lee (Chungnam National University)
  • Byung Jin Cho (KAIST)
  • Woo Young Choi (Sogang University)
  • Sung Woo Hwang (Samsung Advanced Institute of Technology)


Registration Fee

  SEMI Member Non-Member Student
Early Bird (by Jan 29) 150,000 won 180,000 won 80,000 won
Onsite 180,000 won 200,000 won 100,000 won



Memory-based Neuromorphic Hardware for Advanced Neural Network Models (invited)

Prof. Dmitri Strukov

UC Santa Barbara
1:00 pm - 1:40 pm

Innovative Approaches to Next-Generation Device Technology (invited)

Dechao Guo

IBM Research
1:40 pm - 2:20 pm

The Prospects of Phase-Change Memory(PCM) with its Own Unique Characteristics at Memory Centric Computing Era

Hyung Dong Lee

SK hynix
2:20 pm - 2:40 pm


2:40 pm - 3:00 pm

Memory Process, Design and Cell Architecture: Current & Future

Jeongdong Choe

3:00 pm - 3:20 pm

Emerging Ferroelectric Devices for Energy-Efficient Computing (invited)

Prof. Masaharu Kobayashi

The University of Tokyo
3:20 pm - 4:00 pm

Epitaxy of (In)AlGaN Layer Stacks for RF and Power Switching (invited)

Joff Derluyn

4:00 pm - 4:40 pm

Overview of Embedded MRAM Technology: Current and Future

Shinhee Han

Samsung Electronics
4:40 pm - 5:00 pm

* The agenda will be subject to change without notice.

* Presentation files agreed by speakers will be provided to attendees. It will be informed how to download the files after the event.