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S4. Plasma Science and Etching Technology

Thursday, February 6 | 1:00 pm - 5:30 pm
#307

Ultra-fine Patterning Technology for EUV Era

The critical dimension of the semiconductor devices is decreasing to angstrom unit which contains only tens of atoms. For the precise control of the semiconductor device fabrication, various tools and methods including atomic layer deposition (ALD), atomic layer etching (ALE), cyclic etching, EUV lithography are becoming more essential in addition to conventional chemical vapor deposition (CVD), plasma etching, immersion ArF lithography, In addition, as the device size is decreased to deep subnanometer scale, the etch technology in becoming more important, and various materials which are difficult to etch are added in the material list to be etched by the evolution of various nonvolatile memory devices, and more selective and deeper etching with higher aspect ratio etching are required.  This year, in S4 session, as the continuation of last year, we focus on the topics related to diagnostic technique for next generation, new materials etching, etching technology for EUV era, and ALE. We invited the etch specialists from worldwide and we will try to provide the good chances to get the insight on the next generation etch technologies at this symposium. We hope that the coming symposium contribute to the expansion of the future technologies for overcoming the limitation on the next generation devices fabrication.

 

  • Date: Feb 6(Thu), 2020
  • Time: 1:00 pm - 5:30 pm
  • Room: #307, 3F, COEX
  • Language: English (Simultaneous interpretation will NOT be provided)​​

 

Committee

  • Jaesoung Kim (DB HiTek)
  • Gyoungjin Min (Lam Research)
  • Jongchul Park (Samsung Electronics)
  • Jong Won Shon (ASMK)
  • Geun Young Yeom (Sungkyunkwan University)
  • Minsuk Lee (SK hynix)
  • Seongsoo Lee (Applied Materials)
  • Haejung Lee (Tokyo Electron)
  • IC Jang (Lam Research)

 

Registration Fee

  SEMI Member Non-Member Student
Early Bird (by Jan 29) 150,000 won 180,000 won 80,000 won
Onsite 180,000 won 200,000 won 100,000 won

Agenda

Surface Reaction Mechanisms of Atomic Layer Etching and High-Aspect-Ratio Reactive Ion Etching (invited)

Prof. Satoshi Hamaguchi

Osaka University
1:00 pm - 1:40 pm

Next Generation Etch Technologies for EUV Patterning Era

SangDuk Park

Samsung Electronics
1:40 pm - 2:00 pm

Enabling Vertically Integrated Memories with Co-optimized Deposition and Etch Solutions

Thorsten Lill

Lam Research
2:00 pm - 2:20 pm

Break

2:20 pm - 2:40 pm

UV-VUV Absorption Spectroscopy for Radical Density Measurement in Processing Plasmas (invited)

Prof. Se Youn Moon

Jeonbuk National University
2:40 pm - 3:10 pm

Advanced Plasma Etch Schemes for EUV Patterning (invited)

Romuald Blanc

imec
3:10 pm - 3:50 pm

Plasma Etching Technology Challenges for Next Generation Devices

Huichan Seo

SK hynix
3:50 pm - 4:10 pm

Break

4:10 pm - 4:30 pm

High Fidelity Pattern Transfer with EUV Mask

Joydeep Guha

Applied Materials
4:30 pm - 4:50 pm

Cooling and Particulate Challenges for Next Generation Atomic Layer Etch Technologies

Raj Melkote

Edwards Vacuum
4:50 pm - 5:10 pm

SAQP Pitch Walking Improvement Path Finding by Simulation

Timothy Yang

Lam Research (Coventor)
5:10 pm - 5:30 pm

* The agenda will be subject to change without notice.

* Presentation files agreed by speakers will be provided to attendees. It will be informed how to download the files after the event.

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