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Enabling Device Scaling through Thin Film Stress Control

4:40 pm - 5:00 pm

The demand for more powerful, more efficient memory devices continues to introduce a need for innovative materials and processing steps.  As the scaling of these devices continues to shrink the aspect ratios increase accordingly, creating challenges in the mechanical properties of the device films.  Stress in the thin film layers of the devices can lead to high device failure, and lower overall device yield.  In addition, high modulus, high stress films used for patterning can create stress and bow on the wafer leading to difficulties in wafer handling as well as photo-registration errors.  These challenges have led to an increased need for film stress control without sacrificing film quality required for performance.

Motivated by the need for improved stress control, Lam Research has developed several products designed to meet these needs such as the Vector Datum backside deposition tool that allows for both local and global control of wafer bow. In addition, novel films have been introduced to provide stress control and mechanical stability of high aspect ratio features.

Speaker

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Alice Hollister

Sr. Manager, Lam Research

Alice Hollister, Ph.D. has been working at Lam Research since 2010, serving as a Sr. Process manager in PECVD, and in product marketing for Deposition Product Group.  As process manager she led a team in the development of films for patterning applications on Lam’s Vector platform.
Prior to joining Lam Research, Dr. Hollister received MS, and PhD degrees in Chemical Engineering from University of Illinois- Urbana Champaign and a BS degree in Chemical Engineering with a minor in Computer Science from the Missouri University of Science and Technology. In graduate school, she studied the diffusion of crystalline point defects in metal oxide semiconductors.