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S4. Plasma Science and Etching Technology

2020-02-06 | 오후 1:00 - 오후 5:30
#307

Ultra-fine Patterning Technology for EUV Era

The critical dimension of the semiconductor devices is decreasing to angstrom unit which contains only tens of atoms. For the precise control of the semiconductor device fabrication, various tools and methods including atomic layer deposition (ALD), atomic layer etching (ALE), cyclic etching, EUV lithography are becoming more essential in addition to conventional chemical vapor deposition (CVD), plasma etching, immersion ArF lithography, In addition, as the device size is decreased to deep subnanometer scale, the etch technology in becoming more important, and various materials which are difficult to etch are added in the material list to be etched by the evolution of various nonvolatile memory devices, and more selective and deeper etching with higher aspect ratio etching are required.  This year, in S4 session, as the continuation of last year, we focus on the topics related to diagnostic technique for next generation, new materials etching, etching technology for EUV era, and ALE. We invited the etch specialists from worldwide and we will try to provide the good chances to get the insight on the next generation etch technologies at this symposium. We hope that the coming symposium contribute to the expansion of the future technologies for overcoming the limitation on the next generation devices fabrication.

 

  • 날짜: 2020년 2월 6일(목)
  • 시간: 오후 1:00- 오후 5:30
  • 장소: 코엑스 3층 307호
  • 언어: 영어 (동시통역은 제공되지 않습니다.)​​

 

Committee

 

  • Jaesoung Kim (DB HiTek)
  • Gyoungjin Min (Lam Research Korea)
  • Jongchul Park (Samsung Electronics)
  • Jong Won Shon (ASMK)
  • Geun Young Yeom (Sungkyunkwan University)
  • Minsuk Lee (SK hynix)
  • Seongsoo Lee (Applied Materials Korea)
  • Haejung Lee (Tokyo Electron Korea)
  • IC Jang (Lam Research Korea)

 

 

등록비

  SEMI 회원사 비회원사 학생
사전등록 (1/29까지) 150,000 원 180,000 원 80,000 원
현장등록 180,000 원 200,000 원 100,000 원

Agenda

Surface Reaction Mechanisms of Atomic Layer Etching and High-Aspect-Ratio Reactive Ion Etching

Prof. Satoshi Hamaguchi

Osaka University
오후 1:00 - 오후 1:40

Next Generation Etch Technologies for EUV Patterning Era

SangDuk Park

Samsung Electronics
오후 1:40 - 오후 2:00

Emerging Memories: Enabling Vertically Integrated Memories with Co-optimized Deposition and Etch Solutions

Thorsten Lill

Lam Research
오후 2:00 - 오후 2:20

Break

오후 2:20 - 오후 2:40

UV-VUV Absorption Spectroscopy for Radical Density Measurement in Processing Plasmas

Se Youn Moon

Jeonbuk National University
오후 2:40 - 오후 3:10

Ultra-fine Patterning Technology for EUV Era

오후 3:10 - 오후 3:50

Plasma Etching Technology Challenges for Next Generation Devices

Huichan Seo

SK hynix
오후 3:50 - 오후 4:10

Break

오후 4:10 - 오후 4:30

High Fidelity Pattern Transfer with EUV Mask

Dr. Joydeep Guha

Applied Materials
오후 4:30 - 오후 4:50

Understanding the Cooling and Particulate Challenges for Next Generation Atomic Layer Etch Technologies

Raj Melkote

Edwards Vacuum
오후 4:50 - 오후 5:10

SAQP Pitch Walking Improvement Path Finding by Simulation

Timothy Yang

Lam Research
오후 5:10 - 오후 5:30

*상기일정은 사전 안내 없이 변경될 수 있습니다. 

*발표자료는 연사동의를 받은 자료에 한하여 행사 이후 이메일로 다운로드 방법을 안내드립니다.

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