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S2. Advanced Materials & Process Technology

2020-02-05 | 오후 1:00 - 오후 5:00
#308

Innovative Materials and Processes for the Semiconductor Technology

In this session, the most up-to-date research and development outputs in the field of Advanced Materials and Process Technology, which are the key enablers of the future semiconductor devices, will be shared. Many prominent authors from the academia and industries will talk various research areas of functional materials and semiconductor devices not only in the view points of the fundamental but also of the mass production. Especially, both revolutionary and evolutionary approach to overcome scaling limit will be discussed in the respect of precursor, equipment, and integration innovation. Excellent 8 presentations including 4 outstanding invited talks will be given to cover the major technical issues and the leading-edge solutions.

 

  • 날짜: 2020년 2월 5일(수)
  • 시간: 오후 1:00 - 오후 5:00
  • 장소: 코엑스 3층 308호
  • 언어: 영어 (동시통역은 제공되지 않습니다.)​​

 

Committee

  • Si-Bum Kim (MagnaChip Semiconductor)
  • Oh Hyun Kim (SK hynix)
  • Hyoung-Yoon Kim (DB HiTek)
  • Jae-Sung Roh (Jusung Engineering)
  • Ki-Seon Park (SK Materials)
  • Nae Hak Park (Applied Materials)
  • Jeonghoon Park (Tokyo Electron)
  • Jin-Seong Park (Hanyang University)
  • Hyun-Chul Sohn (Yonsei University)
  • Marco Lee (Lam Research)
  • Won-Jun Lee (Sejong University)
  • In-Gon Lim (Digital Imaging Technology)
  • Han-Jin Lim (Samsung Electronics)

 

등록비

  SEMI 회원사 비회원사 학생
사전등록 (1/29까지) 150,000 원 180,000 원 80,000 원
현장등록 180,000 원 200,000 원 100,000 원

 

Agenda

Extending Memory and Logic Roadmaps with New Materials and Processes (invited)

Ivo J. Raaijmakers

ASM International
오후 1:00 - 오후 1:30

Advanced Process Technologies to Enable Future Devices and Scaling (invited)

Robert D. Clark

Tokyo Electron
오후 1:30 - 오후 2:00

Atomic Layer Deposition of Mo and MoNx Films from Chloride-based Molybdenum Precursors

Se-won Lee

Versum Materials
오후 2:00 - 오후 2:20

Challenges of High Aspect Ratio Gap Fill Process in the Front-end-of-line Processing

Hyung Chul Kim

SK hynix
오후 2:20 - 오후 2:40

Break

오후 2:40 - 오후 3:00

Metallization Challenges in 3D NAND (invited)

Raghuveer Makala

Western Digital
오후 3:00 - 오후 3:40

Precursors for the Atomic Layer Deposition of Electropositive Metal Films (invited)

Prof. Charles H. Winter

Wayne State University
오후 3:40 - 오후 4:20

Interconnect Scaling – Implications & Solutions for RC Delay

Kevin Moraes

Applied Materials
오후 4:20 - 오후 4:40

Enabling Device Scaling through Thin Film Stress Control

Alice Hollister

Lam Research
오후 4:40 - 오후 5:00

* 상기 일정은 사전 안내없이 변경될 수 있습니다.

* 본 프로그램은 발표자료를 출력하여 제공하지 않습니다. 프로그램 종료 후, 연사 동의를 얻은 발표자료의 다운로드 방법을 안내해드립니다. 

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