Hyeon Gyun Yoo

Hyeon Gyun Yoo, Ph.D., has been working as a process and device engineer at SK Hynix since 2016, with expertise in unit process and module integration for DRAM/3D NAND. He has worked on DRAM/3D NAND core product development and is currently working on new module process integration for under 10nm DRAM devices. 

Yoo received his Ph.D. in Materials Science & Engineering from KAIST, Daejeon, Korea, in 2016, and His Ph.D. thesis was on "Fabrication and characterization of inorganic-based flexible nonvolatile memory”.