Chang Heon Yang

Chang Heon YANG is VP of SK powertech Korea where he covers SiC power devices R&D projects overall. He was received B.S., M.S., and Ph.D degrees in University in 2007, 2010, and 2013, respectively. Since 2014, he has been released 1200V 40A SiC Power MOSFET at third in the world. His company then set up a mass production for SiC power semiconductors process and was ready to start. 
Now, he prepared SiC Power devices to commercialize. He has authored or coauthored more than 60 technical papers and holds 28 patents in Korea and China. His research interests include fabrication, analysis, simulation, and design of SiC Power Devices.