Hans-Oliver Joachim

Dr. Hans-Oliver Joachim received a degree in physics from the University of Leipzig, Germany, in 1987 and a Ph.D. in electrical engineering from Osaka University, Japan, in 1996. His career spans more than 25 years of research and development in the semiconductor industry, including 16 years in Japan. Apart from a four-year stint in the renewable energy sector in Japan, he has been involved in the development of GaN power devices at Infineon for almost ten years.