Bu Hyun Ham

Bu Hyun Ham is a Principal Engineer with the DRAM Technology Development team at Samsung Electronics’ Semiconductor R&D Center. He has more than 20 years of experience in semiconductor process development and integration across memory and foundry products. Previously, he worked in New York at ISDA, focusing on innovation in advanced process and design. His current work centers on circuit design and design‑rule development for next‑generation DRAM. Dr. Ham received his B.S. and Ph.D. in Electronic Engineering from Kyung Hee University (Korea) and an MBA from the University at Albany, SUNY (U.S.).