Dong Il Bae

DONG IL BAE has been worked at Samsung Electronics Semiconductor R&D center since 1998 as a semiconductor device and integration engineer. From 1998 to 2007, he had been worked for development of next generation DRAM. He worked for Macro design, Failure Analysis, Cell transistor and 1T capacitorless DRAM. From 2008, he has been worked for Strained transistor development for memory and logic device. He was a lead device engineer for 20nm logic technology for eSiGe technology and also lead device engineer on10nm logic technology at Joint Development Association in IBM alliance, USA. He served as device manager for 7nm logic technology development in IBM alliance at New York. From 2015 to 2020, he had been worked for program leader in integration to develop the world first GAA (Gate-All-Around) MBCFET (Multi-Bridge-Channel FET) for the 3nm logic technology node. Currently he is researching the new semiconductor device which is amalgamating both memory and logic device and next generation logic device.

BAE received a Master’s degree in Electrical Engineering field from KAIST (Korea Advanced Institute of Science and Technology), Daejeon, Sourth Korea, and a Ph.D in Electrical Engineering field from SungKunKwan university, Suwon, South Korea. He has presented over 30 papers and over 150 patents in semiconductor field. He also two times Prizes on logic device field at Samsung Best Paper Award (2011 Silver Prize with RMG transistor development, 2017 Grand Prize with MBCFET development).