Jaehyun Park

Jaehyun Park, Ph.D., is a principal engineer in semiconductor R& D center at Samsung Electronics. He has involved in development of FinFET devices using Si and SiGe channel materials for 7 years, research on the emerging devices for 2 years in semiconductor R& D Center. He is now working at advanced device research lab as a leader of emerging logic device. Dr. Park is also serving as a sub-committee member of the International Electron Devices Meeting (IEDM) from 2022. Dr. Park received the B. S and Ph. D degree in physics from POSTECH, Pohang, Korea in 2006 and 2014, respectively. He has conducted research in the field of the experiment of condensed matter physics. During his degree, he has published 5 SCI papers in the high temperature superconductivity and out-of-plane magnetoresistance using graphene-insertion-layer.