Prof. Sangwoo Lim

Sangwoo Lim, Ph.D. has been a professor at the Department of Chemical and Biomolecular Engineering, Yonsei University since 2005. Lim’s research interest is in the understanding of semiconductor processes and the analysis of materials forming semiconductor and nanodevices to find the relationship between the chemical reaction, structure of materials, and the performance of devices.

Prior to joining Yonsei University, Lim was a Principal Scientist for Freescale Semiconductor (formerly Motorola Semiconductor Product Sector), Austin, TX, USA. During his five years at Freescale Semiconductor, Lim spent time doing surface preparation, gate oxide integration and CMOS 90 and CMOS 65 process integration. In particular, his main responsibility and accomplishments were to launch up the plasma nitrided oxide integration technology to reduce gate leakage current density of CMOS gate dielectrics. 

Prior to joining Freescale Semiconductor, Lim was a postdoctoral research associate at the Department of Electrical Engineering and the Department of Chemistry, Stanford University, Stanford, CA, USA. Lim spent time studying silicon surface chemistry and ozonated water wafer cleaning process during his three years at Stanford University. Lim joined several programs in the International SEMATECH and the NSF/SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing. 

Lim received a Ph.D. degree in Chemical System Engineering from University of Tokyo, Tokyo, Japan and the M.S. and B.S. degrees in Chemical Engineering from Yonsei University, Seoul, Korea. Lim’s Ph.D. dissertation was “Study on the preparation and dielectric constant decrease mechanism of PECVD F-doped SiO2 films”, and M.S. dissertation was “Preparation and surface analysis of RF magnetron sputtered ZnO films”.