Seongwan Ryu

Seong-Wan Ryu, Ph.D. has been with Hynix Semiconductor Inc., Icheon, Korea, developing dynamic random access memory (DRAM) since 2009. He is currently a Senior Member of Technical Staff in the R&D Division. He participated in the development of 2z- and 1z-nm DRAM technologies. His current interests include developing cell transistors for next-generation DRAM.

Ryu received the M.S. and Ph.D. degrees from Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea, in 2006 and 2009, respectively, all in the School of Electrical Engineering and Computer Science. He was the recipient of the Best Poster Paper Award at the 2006 IEEE Nanotechnology Materials and Devices Conference. He has severed a IRPS Committee member for 4 years.