Zhiying Chen
Member Technical Staff, Tokyo Electron America
Zhiying Chen joined TEA in 2011. She is currently Member of Technical Staff with Concept and Feasibility Lab. She is leading advanced pulsing technology and plasma diagnostic towards advanced plasma etch process and chamber development for 3nm and beyond technologies, especially in HARC, gate, patterning, ALE, as well as FREP/Vigus technology development. She is also leading plasma-surface chemistry of EUV MOR photo resist.
Zhiying Chen received the Ph. D. degree in material physics from Chinese Academy of Sciences. Prior to joining TEA, Zhiying held several academic positions including research scientist, STA Fellow, AIST Fellow, lecturer in the University of Houston, Kyoto University, and National Institute of Advanced Industrial Science and Technology, Japan. Her research work involved nanopantograhpy, trace rare gas OES actinometry for plasma diagnostic, diamond-like carbon film deposition by ion beam/atomic beam assisted pulsed laser, SiC epitaxial growth by APCVD.