Sung Ho Jang
Distinguished Engineer / DRAM Device Research, Samsung Electronics
Dr. Sung Ho Jang received the BS, MS and Ph.D. degree in material science and engineering from the Seoul National University, Seoul, Korea, in 1998, 2000 and 2003 respectively. He joined Samsung electronics, Hwasung, in 2003, as a process architecture engineer for DRAM devices. Since 2010, he has been charged of high performance DRAM devices integration projects for DRAM application, such as high-k metal gate technologies and high-band width memories. His current research activities encompass the performance development of the cell and peripheral transistors as a device engineering project leader in the DRAM development team, Semiconductor R&D Center.