김진국

EVP Jinkook Kim has joined SK hynix since 1986 after graduation of E.E. at Yonsei University, South Korea. For 33 years, he has been contributing a lot in the development of the semiconductor memory technology and publishing many patents/papers related to the key technologies. To honor his contributions, South Korea Prime Ministry awarded him a prize for “Development of Science and Technology” at 2008. Currently he is in charge of R&D at SK hynix to be the best-in-class level.

He has successfully developed DRAM technologies from 4Mb to 64Mb/256Mb/2Gb/8Gb/16Gb density and led the world’s first development of “2x nm DRAM with Dual Buried Gate” and “High Band-width Memory (HBM) with Through Silicon Via (TSV)” technology. Recently he also developed the major technologies including Peri-Under-Cell (PUC), W-full fill, and Double Stack process for the world’s first 4D NAND device. In addition, to reinforce the future technological leadership of SK hynix in 4^th industrial revolution, he is leading the revolutionary future memory technologies such as an emerging devices for SCM (Storage Class Memory), new platform based DRAM/NAND, and fundamental researches for neuromorphic device.