S3. Device Technology

Next Generation Devices for Memory Applications 

Next Generation Devices for Memory Applications brings together leading perspectives on the device, process, and integration innovations shaping the future of memory for AI and edge computing. The session spans technology inflection points in 3D NAND scaling, embedded memory platforms, and beyond-legacy DRAM architectures enabled by vertical integration, with an additional focus on materials and integration pathways for next-generation ferroelectric devices. To frame the system-level constraints that increasingly define memory roadmaps, an opening invited talk reviews the achievements, remaining challenges, and outlook for mainstream SiC and GaN power devices, highlighting implications for power delivery, reliability, and manufacturability in memory-centric compute systems. Across the program, speakers will discuss key bottlenecks and opportunities—from process integration windows and variability to endurance, retention, and cost—offering a coherent view of what will enable scalable, energy-efficient memory technologies over the coming years. 

• Date: Feb 11(Wed), 2026
• Time: 13:00-17:25
• Room: 317, Conference Room (South), 3F, COEX
• Language: English (Simultaneous interpretation will NOT be provided.)
• Registration Fee (KRW)
  • Early Bird: SEMI Members 198,000 / Non-members 275,000 / Student 132,000
  • Onsite: 330,000

Committee

• MyungGil Kang (Samsung Electronics)
• Oh-Kyong Kwon (Hanyang University)
• Dong-Won Kim (Samsung Electronics)
• Tae Kyun Kim (SK hynix)
• Rock-Hyun Baek (POSTECH)
• Changhwan Shin (Korea University)
• Sanggi Lee (DB HiTek)
• Sangwoo Lee (Tokyo Electron Korea)
• Hi-Deok Lee (Chungnam National University)
• Woo Young Choi (Seoul National University)