Uwe Schroeder

Uwe Schroeder, Ph.D., has been in a Senior Scientist Deputy/Scientific Director position at Namlab since 2009, responsible for dielectric development activities. The main research topics are DRAM capacitors and the integration of ferroelectric doped HfO2-films into memory devices.

Before joining Namlab, Schroeder was in a Senior Staff Scientist position for Qimonda, which was Infineon Technologies Memory Division and Siemens Semiconductor. He joined Siemens in 1997 for DRAM capacitor development in the DRAM Development Alliance with IBM and Toshiba in Hopewell Jct., NY, before transferring to Infineon's Memory Development Center in Dresden, Germany, in 2000. As a project manager, he continued the research on high k dielectric and its integration into DRAM capacitors. During this work, the so far unknown ferroelectric properties of doped HfO2-based dielectrics were found. He is (co-) author of more than 500 papers, conference contributions, and more than 30 patents, including more than 160 peer-reviewed publications and 50 invited presentations on ferroelectric HfO2 material properties and based devices. He edited a book on ferroelectric HfO2 and serves in the IEEE IEDM and AVS-ALD Technical Program Committees. Dr. Schroeder received the FMA International Award for Ferroelectric Materials and Their Applications in 2019.

Dr. Schroeder received a Master's degree in Physics and a Ph.D. in Physical Chemistry from the University of Bonn, Germany, including a research visit at the University of California, Berkeley, and worked at the University of Chicago as a post-doctoral researcher.