Changwan Lee

2018.8-present, ASM Korea, Process engineer

2011.3-2020, (dropout) Ph.D. Candidate, School of Electrical and Electronic Engineering, Yonsei University, Republic of Korea

2008.9-2011.2, Korea Research Institute of Chemical Technology, Researcher

2006.9-2008.8, M.S., Department of materials engineering, Pai Chai University, Republic of Korea

2000.2-2006.8, B.S., Department of ceramic engineering, Pai Chai University, Republic of Korea

Work Experience

ASM Korea

1. Several SiO gap-fill process development and new penetration achieved to various customer

2. Directly contact customers in various countries to explained ASM technology and addressed their requirements

KRICT (Korea Research Institute of Chemical Technology)

1. Fabricated and investigated of gate dielectrics, channel layers and thermoelectric films via plasma-enhanced chemical vapor deposition (PECVD) and atomic layer deposition (PEALD) process

2. Many kinds of thin film deposition experience such as aluminum oxide, tin oxide, zinc oxide, metal sulfide and metal telluride.