Tae Kyun Kim

Tae Kyun Kim, Ph.D. has been a process and device engineer at SK Hynix since 1998 with development of unit process and module integration in DRAM core product as a process engineer for 12 years and process integration as a device engineer until now. He has gained expertise is in DRAM process integration and involved in DRAM core product development with 110nm to 20nm level and SRAM with 40nm to 28nm. He is currently focusing on new module process integration which is applicable to up-to-date 10nm level DRAM devices at the stage of R&D. He has been a member of STS(SEMI Technology Symposium) Device committee as a representative of SK Hynix since 2016.
Kim received a Ph. D degree in Dept. of Electrical Engineering from KAIST(Korea Advanced Institute of Science and Technology), Daejeon, Korea in 2014 and a master degree in Dept. of Material Science and Engineering from KAIST, Daejeon, Korea in 1998 and a bachelor degree in Dept. of Ceramic Engineering from Yonsei University, Seoul, Korea in 1996. His Ph.D. thesis is that “Fabrication of Si and SiGe Junctionless Bulk FinFETs Using Junction-isolation and Research on Their Transistor Characteristics.”